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IGBT classification based on gate structure [10]: (a) Planar Gate IGBT... | Download Scientific Diagram
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Figure 1 from 1.7kV trench IGBT with deep and separate floating p-layer designed for low loss, low EMI noise, and high reliability | Semantic Scholar
![Figure 1 from A floating dummy trench gate IGBT (FDT-IGBT) for hybrid and electric vehicle (HEV/EV) applications | Semantic Scholar Figure 1 from A floating dummy trench gate IGBT (FDT-IGBT) for hybrid and electric vehicle (HEV/EV) applications | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/0e4d51264a1cef3795be0a5a518ef40b495f9b3c/2-Figure1-1.png)
Figure 1 from A floating dummy trench gate IGBT (FDT-IGBT) for hybrid and electric vehicle (HEV/EV) applications | Semantic Scholar
![Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss | Semantic Scholar Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/6c94c4dd5a89890b63b364344a04489d48f11a30/1-Figure1-1.png)
Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss | Semantic Scholar
![Typical trench gate/field-stop IGBT turn-OFF process with inductive loads. | Download Scientific Diagram Typical trench gate/field-stop IGBT turn-OFF process with inductive loads. | Download Scientific Diagram](https://www.researchgate.net/publication/309345589/figure/fig4/AS:667057792245767@1536050379747/Typical-trench-gate-field-stop-IGBT-turn-OFF-process-with-inductive-loads.png)
Typical trench gate/field-stop IGBT turn-OFF process with inductive loads. | Download Scientific Diagram
![3D IGBT Structures May Yield Higher Efficency for Silicon Power Transistors - Electrical Engineering News and Products 3D IGBT Structures May Yield Higher Efficency for Silicon Power Transistors - Electrical Engineering News and Products](https://www.eeworldonline.com/wp-content/uploads/2019/10/161205-TIT_3D_IGBT.jpg)
3D IGBT Structures May Yield Higher Efficency for Silicon Power Transistors - Electrical Engineering News and Products
![Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss | Semantic Scholar Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/6c94c4dd5a89890b63b364344a04489d48f11a30/2-Figure3-1.png)
Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss | Semantic Scholar
![Figure 2 from A Trench-Gate High-Conductivity IGBT (HiGT) With Short-Circuit Capability | Semantic Scholar Figure 2 from A Trench-Gate High-Conductivity IGBT (HiGT) With Short-Circuit Capability | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/c78668bd70267b40ef0027957eeb0c081899bfbb/2-Figure2-1.png)